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QJD1210SA2Mosfet Array 1200V (1.2kV) 100A 415W Chassis Mount Module

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ABRmicro #.ABR2045-QJD121-1093585
ManufacturerPowerex Inc.
MPN #.QJD1210SA2
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNext Generation Power Semiconductors Brief(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberQJD1210
Configuration2 N-Channel (Dual)
Continuous Drain Current (ID) @ 25°C100A
Drain-to-Source Voltage (VDS)1200V (1.2kV)
FET Feature-
Gate Charge Total (Qg)(Max.)330nC @ 15V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8200pF @ 10V
Mounting StyleChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
Power - Max415W
RDS(on) Drain-to-Source On Resistance17mOhm @ 100A, 15V
Package Type (Mfr.)Module
TechnologySilicon Carbide (SiC)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.6V @ 34mA
Package / CaseModule
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Next Generation Power Semiconductors BriefQJD1210SA2 Preliminary Datasheet
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)