PJQ4606_R1_00001Mosfet Array 30V 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc) 2W (Ta), 18W (Tc) Surface Mount DFN3030B-8
1:$0.2340
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PJQ460-2095225
ManufacturerPanjit International Inc.
MPN #.PJQ4606_R1_00001
Estimated Lead Time-
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Datasheet
PJQ4606(PDF)
PJQ4606(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 0.2340
Ext. Price$ 0.2340
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.2340$702.0000
6000$0.2210$1326.0000
9000$0.2060$1854.0000
30000$0.2030$6090.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 80 V 108A (Tc) 113.6W (Tc) Surface Mount TO-263 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberPJQ4606
ConfigurationN and P-Channel Complementary
Continuous Drain Current (ID) @ 25°C7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
Drain-to-Source Voltage (VDS)30V
FET Feature-
Gate Charge Total (Qg)(Max.)4.8nC @ 4.5V, 7.8nC @ 4.5V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)429pF @ 25V, 846pF @ 15V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max2W (Ta), 18W (Tc)
RDS(on) Drain-to-Source On Resistance19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Package Type (Mfr.)DFN3030B-8
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerWDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)