PMEG060T080CLPEZDiode Array 1 Pair Common Cathode 60 V 4A Surface Mount TO-277, 3-PowerDFN
1:$0.6070
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ABRmicro #.ABR286-PMEG06-91485
ManufacturerNexperia
MPN #.PMEG060T080CLPEZ
Estimated Lead Time4 Weeks
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Datasheet
PMEG060T080CLPE (PDF)
PMEG060T080CLPE (PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.6070
Ext. Price$0.6070
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6070$0.6070
10$0.5250$5.2490
100$0.3630$36.3380
500$0.3040$151.9380
1000$0.2580$258.1880
2000$0.2310$461.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMEG060
Average Forward Rectified Current (per diode)4A
Reverse Leakage Current @ Rated Vʀ1.8 µA @ 60 V
Diode Configuration1 Pair Common Cathode
Mounting StyleSurface Mount
Junction Temperature Range175°C
Reverse Recovery Time (trr)17 ns
SpeedFast Recovery =< 500ns, > 200mA (Io)
Package Type (Mfr.)CFP15B
TechnologySchottky
Max. DC Blocking Voltage (Vʀ)60 V
Forward Voltage (Vғ) @ Iғ660 mV @ 4 A
Package / CaseTO-277, 3-PowerDFN
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PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.10.0080 (Other; No import duty applies)
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Diode Array 1 Pair Common Cathode 200 V 4A Surface Mount TO-277, 3-PowerDFN Additional Details
The PMEG060T080CLPEZ is a diode array manufactured by Nexperia USA Inc., featuring a single pair of common cathode diodes designed for surface mount applications. It is housed in a TO-277, 3-PowerDFN package, providing a compact and efficient form factor. This component offers a maximum reverse voltage of 60 V and can handle continuous forward currents up to 4A. It is characterized by a fast recovery time of less than 500 nanoseconds and operates efficiently at elevated temperatures, with a maximum junction temperature of 175°C. The diode is of the Schottky type, which typically provides lower forward voltage drop and faster switching performance compared to standard p-n junction diodes.
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