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VN2210N3-GN-Channel 100 V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3

1:$2.0030

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-VN2210-472920
MPN #.VN2210N3-G
Estimated Lead Time10 Weeks
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In Stock: 2564
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bag
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 2.0030
Ext. Price$ 2.0030
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0030$2.0030
25$1.6650$41.6250
100$1.5210$152.1000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusActive
Base Product NumberVN2210
Continuous Drain Current (ID) @ 25°C1.2A (Tj)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)500 pF @ 25 V
MfrMicrochip Technology
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation740mW (Tc)
RDS(on) Drain-to-Source On Resistance350mOhm @ 4A, 10V
Package Type (Mfr.)TO-92-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 10mA
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)