VN2210N2N-Channel 100 V 1.7A (Tj) 360mW (Tc) Through Hole TO-39
1:$14.4210
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ABRmicro #.ABR278-VN2210-360576
ManufacturerMicrochip Technology
MPN #.VN2210N2
Estimated Lead Time9 Weeks
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Datasheet
VN2210 Datashee... (PDF)
VN2210 Datashee... (PDF)
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Min.&Mult.1
Packaging
Bag
Shipping DateDecember 24, 2024
* Quantity
Unit Price$14.4210
Ext. Price$14.4210
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$14.4210$14.4210
25$13.2250$330.6230
100$11.9770$1197.6500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusActive
Base Product NumberVN2210
Continuous Drain Current (ID) @ 25°C1.7A (Tj)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)500 pF @ 25 V
MfrMicrochip Technology
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation360mW (Tc)
RDS(on) Drain-to-Source On Resistance350mOhm @ 4A, 10V
Package Type (Mfr.)TO-39
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 10mA
Package / CaseTO-205AD, TO-39-3 Metal Can
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Datasheets
Design Resources
Environmental Information
PCN Assembly/Origin
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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N-Channel 25 V 48A (Tc) 1.8W (Ta) Surface Mount 8-PDFN (3.3x3.3) Additional Details
The VN2210N2 is an N-Channel MOSFET manufactured by Microchip Technology, designed for managing electrical load with efficiency. It features a voltage rating of 100 V and can handle a current of 1.7A under specific thermal conditions, dissipating 360mW of power when attached to a suitable heat sink. Encased in a TO-39 through-hole package, this MOSFET offers a gate threshold voltage of 2.4V at 10mA and a total input capacitance of 500 pF at 25V. Its robust metal oxide semiconductor structure ensures reliable performance in controlling and switching operations.
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