TP2635N3-GP-Channel 350 V 180mA (Tj) 1W (Ta) Through Hole TO-92-3
1:$1.7100
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ABRmicro #.ABR278-TP2635-351236
ManufacturerMicrochip Technology
MPN #.TP2635N3-G
Estimated Lead Time24 Weeks
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Datasheet
TP2635 (PDF)
TP2635 (PDF)
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Bag
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.7100
Ext. Price$1.7100
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Price Gradients
Qty.Unit PriceExt. Price
1$1.7100$1.7100
25$1.4180$35.4610
100$1.2900$128.9880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusActive
Base Product NumberTP2635
Continuous Drain Current (ID) @ 25°C180mA (Tj)
Drain-to-Source Voltage (VDS)350 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 10V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)300 pF @ 25 V
MfrMicrochip Technology
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance15Ohm @ 300mA, 10V
Package Type (Mfr.)TO-92-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The TP2635N3-G is a P-channel MOSFET manufactured by Microchip Technology, designed for efficient power management in electronic circuits. It features a drain-source voltage rating of 350 V and a continuous drain current of 180 mA at the junction temperature (Tj). The device is capable of dissipating up to 1 watt of power in ambient conditions (Ta). This MOSFET comes in a through-hole TO-92-3 package, providing ease of use in prototyping and soldering to printed circuit boards. It supports gate drive voltages of ±20V with typical trigger voltages at 2.5V and 10V, making it suitable for various voltage switching applications.
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