TN2106N3-GN-Channel 60 V 300mA (Tj) 740mW (Tc) Through Hole TO-92-3
1:$0.5810
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ABRmicro #.ABR278-TN2106-352457
ManufacturerMicrochip Technology
MPN #.TN2106N3-G
Estimated Lead Time7 Weeks
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Datasheet
TN2106 (PDF)
TN2106 (PDF)
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Min.&Mult.1
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Bag
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.5810
Ext. Price$0.5810
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Price Gradients
Qty.Unit PriceExt. Price
1$0.5810$0.5810
25$0.4790$11.9800
100$0.4440$44.4130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusActive
Base Product NumberTN2106
Continuous Drain Current (ID) @ 25°C300mA (Tj)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)50 pF @ 25 V
MfrMicrochip Technology
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation740mW (Tc)
RDS(on) Drain-to-Source On Resistance2.5Ohm @ 500mA, 10V
Package Type (Mfr.)TO-92-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The TN2106N3-G is a semiconductor device manufactured by Microchip Technology, designed as an N-Channel MOSFET. It features a maximum drain-source voltage of 60 volts and can handle a continuous current of up to 300mA, provided the junction temperature is suitable. Encased in a TO-92-3 through-hole package, this MOSFET has a power dissipation capacity of 740mW when mounted to a case. The device supports gate-source voltages of up to ±20 volts and typically operates at gate thresholds of 4.5V or 10V, making it suitable for various switching and amplification tasks in electronic circuits.
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