TN2106N3-GN-Channel 60 V 300mA (Tj) 740mW (Tc) Through Hole TO-92-3
1:$0.5470
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ABRmicro #.ABR2045-TN2106-352457
ManufacturerMicrochip Technology
MPN #.TN2106N3-G
Estimated Lead Time7 Weeks
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Datasheet
TN2106(PDF)
TN2106(PDF)
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Min.&Mult.1
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Bag
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.5470
Ext. Price$ 0.5470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5470$0.5470
25$0.4510$11.2750
100$0.4180$41.8000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 25 V 48A (Tc) 1.8W (Ta) Surface Mount 8-PDFN (3.3x3.3) Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusActive
Base Product NumberTN2106
Continuous Drain Current (ID) @ 25°C300mA (Tj)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)50 pF @ 25 V
MfrMicrochip Technology
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation740mW (Tc)
RDS(on) Drain-to-Source On Resistance2.5Ohm @ 500mA, 10V
Package Type (Mfr.)TO-92-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)