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LP0701N3-GP-Channel 16.5 V 500mA (Tj) 1W (Tc) Through Hole TO-92

1:$1.6760

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ABRmicro #.ABR278-LP0701-338844
MPN #.LP0701N3-G
Estimated Lead Time4 Weeks
SampleGet Free Sample
DatasheetDatasheetLP0701 (PDF)
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In Stock: 268
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Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.6760
Ext. Price$1.6760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6760$1.6760
25$1.3940$34.8500
100$1.2820$128.2440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusActive
Base Product NumberLP0701N3
Continuous Drain Current (ID) @ 25°C500mA (Tj)
Drain-to-Source Voltage (VDS)16.5 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2V, 5V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)250 pF @ 15 V
MfrMicrochip Technology
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 300mA, 5V
Package Type (Mfr.)TO-92
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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N-Channel 350 V 72mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
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Additional Details
The LP0701N3-G, manufactured by Microchip Technology, is a P-Channel MOSFET designed for low voltage applications. It supports a maximum drain-source voltage of 16.5 V and a continuous drain current of up to 500mA. The device has a thermal power dissipation of 1W under specified conditions. Packaged in a TO-92 through-hole format, it is suitable for straightforward integration into circuits. The MOSFET features a low gate threshold voltage of 2V and 5V, and exhibits an input capacitance of 250 pF at 15 V, ensuring efficient switching performance. It can handle gate-source voltages up to ±10V, making it a reliable component for diverse electronic designs.
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