LP0701LG-GP-Channel 16.5 V 700mA (Tj) 1.5W (Tc) Surface Mount 8-SOIC
1:$2.2130
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ABRmicro #.ABR278-LP0701-385829
ManufacturerMicrochip Technology
MPN #.LP0701LG-G
Estimated Lead Time7 Weeks
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Datasheet
LP0701 (PDF)
LP0701 (PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$2.2130
Ext. Price$2.2130
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Qty.Unit PriceExt. Price
1$2.2130$2.2130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberLP0701
Continuous Drain Current (ID) @ 25°C700mA (Tj)
Drain-to-Source Voltage (VDS)16.5 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2V, 5V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)250 pF @ 15 V
MfrMicrochip Technology
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.5W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 300mA, 5V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1.1mA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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N-Channel 25 V 48A (Tc) 1.8W (Ta) Surface Mount 8-PDFN (3.3x3.3) Additional Details
The LP0701LG-G is a surface mount P-Channel MOSFET manufactured by Microchip Technology. This component is designed for operation with a maximum drain-source voltage of 16.5 V and a continuous drain current of 700 mA at junction temperature. It offers a power dissipation of 1.5 W when mounted on a case. The device features a gate threshold voltage of 1V at 1.1mA, with the capability to handle gate-source voltages up to ±10V. Encased in an 8-SOIC package, this MOSFET is suitable for compact electronic circuit designs requiring efficient voltage control within specified electrical limits.
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