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LND250K1-GN-Channel 500 V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
1:$0.4260
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-LND250-515258
ManufacturerMicrochip Technology
MPN #.LND250K1-G
Estimated Lead Time5 Weeks
SampleGet Free Sample
DatasheetLND250(PDF)
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In Stock: 11222
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.4260
Ext. Price$ 0.4260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4260$0.4260
25$0.3620$9.0500
100$0.3520$35.2000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 25 V 48A (Tc) 1.8W (Ta) Surface Mount 8-PDFN (3.3x3.3) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberLND250
Continuous Drain Current (ID) @ 25°C13mA (Tj)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V
FET FeatureDepletion Mode
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10 pF @ 25 V
MfrMicrochip Technology
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation360mW (Ta)
RDS(on) Drain-to-Source On Resistance1000Ohm @ 500µA, 0V
Package Type (Mfr.)SOT-23 (TO-236AB)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)