LND150N3-G-P013N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3
1:$0.4180
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-LND150-474004
ManufacturerMicrochip Technology
MPN #.LND150N3-G-P013
Estimated Lead Time22 Weeks
SampleGet Free Sample
Datasheet
LND150(PDF)
LND150(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Box (TB)
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.4180
Ext. Price$ 0.4180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
2000$0.4180$836.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 25 V 48A (Tc) 1.8W (Ta) Surface Mount 8-PDFN (3.3x3.3) Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusActive
Base Product NumberLND150
Continuous Drain Current (ID) @ 25°C30mA (Tj)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V
FET FeatureDepletion Mode
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10 pF @ 25 V
MfrMicrochip Technology
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation740mW (Ta)
RDS(on) Drain-to-Source On Resistance1000Ohm @ 500µA, 0V
Package Type (Mfr.)TO-92-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)