DN2535N3-G-P013N-Channel 350 V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226)
1:$0.6420
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-DN2535-354947
ManufacturerMicrochip Technology
MPN #.DN2535N3-G-P013
Estimated Lead Time52 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Box (TB)
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.6420
Ext. Price$0.6420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
2000$0.6420$1283.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusActive
Base Product NumberDN2535
Continuous Drain Current (ID) @ 25°C120mA (Tj)
Drain-to-Source Voltage (VDS)350 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V
FET FeatureDepletion Mode
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)300 pF @ 25 V
MfrMicrochip Technology
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Tc)
RDS(on) Drain-to-Source On Resistance25Ohm @ 120mA, 0V
Package Type (Mfr.)TO-92 (TO-226)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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