DN2530N8-GN-Channel 300 V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
1:$0.7520
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-DN2530-355228
ManufacturerMicrochip Technology
MPN #.DN2530N8-G
Estimated Lead Time6 Weeks
SampleGet Free Sample
Datasheet
DN2530 (PDF)
DN2530 (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 3367
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.7520
Ext. Price$0.7520
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7520$0.7520
25$0.6240$15.5920
100$0.5560$55.5690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberDN2530
Continuous Drain Current (ID) @ 25°C200mA (Tj)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V
FET FeatureDepletion Mode
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)300 pF @ 25 V
MfrMicrochip Technology
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
RDS(on) Drain-to-Source On Resistance12Ohm @ 150mA, 0V
Package Type (Mfr.)TO-243AA (SOT-89)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-243AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
2N7002-G$0.5460
N-Channel 60 V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)
DN1509N8-G$0.8130
N-Channel 90 V 360mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)DN2450N8-G$0.7690
N-Channel 500 V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
MCP87090T-U/LC$0.4020
N-Channel 25 V 48A (Tc) 1.8W (Ta) Surface Mount 8-PDFN (3.3x3.3) Additional Details
The DN2530N8-G manufactured by Microchip Technology is an N-Channel MOSFET designed for surface-mount applications, housed in a TO-243AA (SOT-89) package. It is capable of handling a maximum drain-source voltage of 300 V and a continuous drain current of 200mA under specified temperature conditions (Tj). It also features a power dissipation capability of 1.6W when mounted on a suitable thermal surface (Ta). The MOSFET offers an on-state resistance of 12 Ohms at a drain current of 150mA and zero gate-source voltage, and it supports a maximum gate-source voltage of ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.