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MMIX1F520N075T2N-Channel 75 V 500A (Tc) 830W (Tc) Surface Mount 24-SMPD

1:$19.9950

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-MMIX1F-1008994
ManufacturerIXYS
MPN #.MMIX1F520N075T2
Estimated Lead Time27 Weeks
SampleGet Free Sample
DatasheetDatasheetMMIX1F520N075T2(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 19.9950
Ext. Price$ 19.9950
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$19.9950$19.9950
20$17.7700$355.4060
100$15.5410$1554.1190
500$13.2620$6631.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesGigaMOS™, TrenchT2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberMMIX1F520
Continuous Drain Current (ID) @ 25°C500A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)545 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)41000 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation830W (Tc)
RDS(on) Drain-to-Source On Resistance1.6mOhm @ 100A, 10V
Package Type (Mfr.)24-SMPD
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / Case24-PowerSMD, 21 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
MMIX1F520N075T2
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The MMIX1F520N075T2 is a high-performance N-Channel MOSFET manufactured by IXYS, designed for surface mount applications using a 24-SMPD package. It supports a maximum drain-source voltage of 75V and can handle continuous drain currents up to 500A at its case temperature rating. The device features a low on-resistance of 1.6 milliohms when operating at 100A and 10V, ensuring efficient conductivity. With a total gate charge of 545 nanocoulombs at 10V, the MOSFET offers a robust and reliable solution for demanding power applications. Additionally, it boasts a significant power dissipation capacity of 830 watts at its case temperature, confirming its suitability for high-power electronic systems.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.