MMIX1F180N25TN-Channel 250 V 132A (Tc) 570W (Tc) Surface Mount 24-SMPD
1:$40.3400
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ABRmicro #.ABR2045-MMIX1F-1020614
ManufacturerIXYS
MPN #.MMIX1F180N25T
Estimated Lead Time27 Weeks
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Datasheet
MMIX1F180N25T(PDF)
MMIX1F180N25T(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 40.3400
Ext. Price$ 40.3400
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$40.3400$40.3400
10$35.9430$359.4330
100$31.5490$3154.8810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesGigaMOS™, HiPerFET™, TrenchT2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberMMIX1F180
Continuous Drain Current (ID) @ 25°C132A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)364 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)23800 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation570W (Tc)
RDS(on) Drain-to-Source On Resistance13mOhm @ 90A, 10V
Package Type (Mfr.)24-SMPD
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / Case24-PowerSMD, 21 Leads
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The MMIX1F180N25T is an N-Channel MOSFET manufactured by IXYS, designed for high-efficiency performance. It supports a maximum voltage of 250V and a current of 132A, ensuring robust operational capabilities. With a power dissipation capacity of 570W under controlled thermal conditions (Tc), it is suitable for surface-mount applications in a 24-SMPD package. The MOSFET's gate threshold voltage is specified at 5V with a gate charge of 364 nC at 10V, indicating its drive requirements and switching characteristics. This component is engineered for reliable performance under demanding conditions.
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