IXTZ550N055T2N-Channel 55 V 550A (Tc) 600W (Tc) Surface Mount DE475
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ABRmicro #.ABR2045-IXTZ55-935531
ManufacturerIXYS
MPN #.IXTZ550N055T2
Estimated Lead Time-
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Datasheet
IXTZ550N055T2(PDF)
IXTZ550N055T2(PDF)
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Shipping DateNovember 15, 2024
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Technical Specifications
SeriesTrenchT2™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTZ550
Continuous Drain Current (ID) @ 25°C550A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)595 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)40000 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation600W (Tc)
RDS(on) Drain-to-Source On Resistance1mOhm @ 100A, 10V
Package Type (Mfr.)DE475
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case6-SMD, Flat Leads
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTZ550N055T2 is a semiconductor component manufactured by IXYS, designed as an N-channel power MOSFET. It features a breakdown voltage of 55 V and is capable of handling a continuous current of 550A under specific conditions. The component can manage a power dissipation up to 600W when mounted on a suitable surface. It is packaged in a DE475 surface mount configuration. The device offers a gate-source voltage range of ±20V and requires a typical gate voltage of 10V for operation. Additionally, it exhibits a total gate charge of 595 nC at a 10V gate-source voltage.
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