IXTY8N70X2N-Channel 700 V 8A (Tc) 150W (Tc) Surface Mount TO-252AA
1:$2.7260
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ABRmicro #.ABR2045-IXTY8N-1008536
ManufacturerIXYS
MPN #.IXTY8N70X2
Estimated Lead Time32 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.7260
Ext. Price$ 2.7260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.7260$2.7260
70$2.1600$151.2040
140$1.8510$259.1230
560$1.6460$921.6550
1050$1.4090$1479.3190
2030$1.3270$2693.9370
5040$1.2730$6415.2900
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesUltra X2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTY8
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)800 pF @ 10 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance500mOhm @ 500mA, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTY8N70X2 is a robust N-Channel MOSFET manufactured by IXYS, designed for high-voltage applications with a breakdown voltage of 700 V and a current rating of 8A. It boasts a power dissipation capacity of 150W when mounted on an appropriate heatsink. This surface-mount device is housed in a TO-252AA package, which allows for efficient heat dissipation in compact configurations. The MOSFET features a gate charge of 12 nC at 10 V, a low on-resistance of 500mΩ at 500mA and 10V, and an input capacitance measuring 800 pF at 10 V, suitable for high-frequency switching operations.
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