IXTY50N085TN-Channel 85 V 50A (Tc) 130W (Tc) Surface Mount TO-252AA
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ABRmicro #.ABR2045-IXTY50-968715
ManufacturerIXYS
MPN #.IXTY50N085T
Estimated Lead Time-
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTY5
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)85 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1460 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation130W (Tc)
RDS(on) Drain-to-Source On Resistance23mOhm @ 25A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 25µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTY50N085T is an N-channel MOSFET manufactured by IXYS, designed for efficient power management in electronic circuits. It has a drain-source voltage rating of 85V and a continuous current capacity of 50A at the case temperature. This component is capable of handling power up to 130W, based on case temperature conditions. It is housed in a surface-mount TO-252AA package, facilitating ease of integration onto circuit boards. The MOSFET boasts an input capacitance of 1460 pF at 25V and a total gate charge of 34 nC at 10V, which are critical parameters for understanding its switching performance and efficiency in various electronic systems.
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