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IXTY2N80PN-Channel 800 V 2A (Tc) 70W (Tc) Surface Mount TO-252AA
N/A
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ABRmicro #.ABR2045-IXTY2N-934492
ManufacturerIXYS
MPN #.IXTY2N80P
Estimated Lead Time-
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Technical Specifications
SeriesPolarHV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTY2
Continuous Drain Current (ID) @ 25°C2A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance6Ohm @ 1A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 50µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTY2N80P by IXYS is an N-channel MOSFET designed for efficient switching performance in surface mount configurations. It operates at a maximum voltage of 800 V and current of 2 A when considering case temperature limits. The power dissipation capacity of the device is rated at 70 W under specified thermal conditions from a TO-252AA package. Its gate charge is specified at 10.6 nC at 10 V, ensuring manageable driving requirements, while the on-state resistance measures 6 Ohms at 1A, 10V. The device exhibits a gate threshold voltage of 5.5V at a minimal current of 50µA, supporting low power operation within its designed parameters.
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