Image is for reference only, the actual product serves as the standard.
IXTU8N70X2N-Channel 700 V 8A (Tc) 150W (Tc) Through Hole TO-251-3

1:$3.4110

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTU8N-929078
ManufacturerIXYS
MPN #.IXTU8N70X2
Estimated Lead Time32 Weeks
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 44
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.4110
Ext. Price$ 3.4110
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.4110$3.4110
70$2.7000$188.9870
140$2.3140$323.9780
560$2.0560$1151.3250
1050$1.7610$1848.5910
2030$1.6590$3366.8820
5040$1.5910$8016.4350
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
IGBT Module NPT Single 1200 V 100 A 445 W Chassis Mount SOT-227B
IGBT 600 V 75 A 300 W Through Hole TO-247AD
IXGH6N170$9.0360
IGBT NPT 1700 V 12 A 75 W Through Hole TO-247AD
IGBT 600 V 75 A 300 W Through Hole TO-264 (IXGK)
IGBT Module PT Single 600 V 200 A 595 W Chassis Mount SOT-227B
IGBT PT 600 V 62 A 210 W Through Hole ISOPLUS247™
IXYL60N450$105.9140
IGBT 4500 V 90 A 417 W Through Hole ISOPLUSi5-Pak™
Technical Specifications
SeriesUltra X2
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTU8
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)800 pF @ 10 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance500mOhm @ 500mA, 10V
Package Type (Mfr.)TO-251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-251-3 Stub Leads, IPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTU8N70X2 is a semiconductor component manufactured by IXYS, designed as an N-Channel MOSFET. It features a maximum voltage rating of 700V and can handle continuous currents up to 8A under specified conditions. The component is capable of dissipating up to 150 watts when mounted and used according to specifications. Encapsulated in a TO-251-3 through-hole package, it offers a 10V gate threshold voltage and a total gate charge of 12 nC when charged at 10V. Additionally, it has a gate-to-source voltage tolerance of ±30V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.