IXTU02N50DN-Channel 500 V 200mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-251AA
1:$1.1450
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ABRmicro #.ABR2045-IXTU02-1002846
ManufacturerIXYS
MPN #.IXTU02N50D
Estimated Lead Time57 Weeks
SampleGet Free Sample
Datasheet
IXT(P,U,Y)02N50D(PDF)
IXT(P,U,Y)02N50D(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1450
Ext. Price$ 1.1450
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1450$1.1450
70$0.9210$64.4830
140$0.7580$106.0590
560$0.6840$383.1800
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesDepletion
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTU02
Continuous Drain Current (ID) @ 25°C200mA (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET FeatureDepletion Mode
FET TypeN-Channel
Grade-
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)120 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.1W (Ta), 25W (Tc)
Qualification-
RDS(on) Drain-to-Source On Resistance30Ohm @ 50mA, 0V
Package Type (Mfr.)TO-251AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 25µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTU02N50D is a discrete semiconductor component manufactured by IXYS, designed as an N-channel MOSFET. It operates with a maximum voltage rating of 500 V and can handle a continuous current of 200 mA at the case temperature (Tc). The power dissipation capabilities are rated at 1.1W for ambient temperature conditions (Ta) and 25W for case temperature conditions. Housed in a TO-251AA through-hole package, the device can support efficient thermal management. It features a gate-source voltage rating of ±20V and is typically driven by a gate threshold voltage of approximately 10V, making it suitable for handling medium-voltage applications in compact environments.
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