Image is for reference only, the actual product serves as the standard.
IXTT60N20L2N-Channel 200 V 60A (Tc) 540W (Tc) Surface Mount TO-268AA

1:$16.6380

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTT60-918454
ManufacturerIXYS
MPN #.IXTT60N20L2
Estimated Lead Time44 Weeks
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 26
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 16.6380
Ext. Price$ 16.6380
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$16.6380$16.6380
30$13.4720$404.1600
120$12.6800$1521.6000
510$11.4910$5860.4100
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
IGBT Module NPT Single 1200 V 100 A 445 W Chassis Mount SOT-227B
IGBT 600 V 75 A 300 W Through Hole TO-247AD
IXGH6N170$8.5040
IGBT NPT 1700 V 12 A 75 W Through Hole TO-247AD
IGBT 600 V 75 A 300 W Through Hole TO-264 (IXGK)
IGBT Module PT Single 600 V 200 A 595 W Chassis Mount SOT-227B
IGBT PT 600 V 62 A 210 W Through Hole ISOPLUS247™
IXYL60N450$99.6840
IGBT 4500 V 90 A 417 W Through Hole ISOPLUSi5-Pak™
Technical Specifications
SeriesLinear L2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTT60
Continuous Drain Current (ID) @ 25°C60A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)255 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10500 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation540W (Tc)
RDS(on) Drain-to-Source On Resistance45mOhm @ 30A, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)