IXTT16N10D2N-Channel 100 V 16A (Tc) 830W (Tc) Surface Mount TO-268AA
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ABRmicro #.ABR2045-IXTT16-1033477
ManufacturerIXYS
MPN #.IXTT16N10D2
Estimated Lead Time-
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Datasheet
IXT(H,T)16N10D2(PDF)
IXT(H,T)16N10D2(PDF)
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Shipping DateNovember 17, 2024
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Technical Specifications
SeriesDepletion
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTT16
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))0V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)225 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5700 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation830W (Tc)
RDS(on) Drain-to-Source On Resistance64mOhm @ 8A, 0V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTT16N10D2 is an N-Channel MOSFET manufactured by IXYS, designed for efficient power switching applications. It can handle a maximum voltage of 100 V and a continuous current capacity of 16A, with a notable power dissipation capacity of 830W when mounted on a TO-268AA surface. The device exhibits a low on-state resistance of 64mOhm at an 8A current, optimizing its performance for minimizing power loss. This MOSFET is suitable for surface mount applications, allowing for efficient thermal management and space-saving in electronic designs.
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