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IXTQ470P2N-Channel 500 V 42A (Tc) 830W (Tc) Through Hole TO-3P

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ABRmicro #.ABR2045-IXTQ47-912498
ManufacturerIXYS
MPN #.IXTQ470P2
Estimated Lead Time-
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DatasheetDatasheetIXTQ470P2(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
SeriesPolarP2™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTQ470
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)88 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5400 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation830W (Tc)
RDS(on) Drain-to-Source On Resistance145mOhm @ 500mA, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXTQ470P2
Environmental Information
Ixys IC REACH
PCN Design/Specification
Multiple Devices Material 23/Jun/2020
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)