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IXTQ450P2N-Channel 500 V 16A (Tc) 300W (Tc) Through Hole TO-3P
1:$4.6340
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ABRmicro #.ABR2045-IXTQ45-1039120
ManufacturerIXYS
MPN #.IXTQ450P2
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetIXTP/TQ/TH450P2(PDF)
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In Stock: 28
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 4.6340
Ext. Price$ 4.6340
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.6340$4.6340
10$3.8900$38.8980
100$3.1470$314.7130
500$2.7980$1398.7810
1000$2.3950$2394.8750
2000$2.2560$4511.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesPolarP2™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTQ450
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)43 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2530 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance330mOhm @ 8A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXYS IXTQ450P2 is a high-performance N-channel power MOSFET with a voltage rating of 500 V and a continuous current rating of 16A when properly mounted to a heatsink. It is designed for efficient power management with a maximum power dissipation of 300W. The device is encapsulated in a TO-3P through-hole package, facilitating easy installation on circuit boards. Its gate threshold voltage is specified at 10V, featuring a capacitance of 2530 pF at 25 V, and a total gate charge of 43 nC at 10 V. These specifications make it a robust choice for handling high power levels in electronic circuits.
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