The IXTQ280N055T is a robust N-Channel MOSFET manufactured by IXYS, designed for efficient power handling in electronic circuits. It features a maximum drain-source voltage of 55 V and is capable of supporting a continuous current of up to 280A when operating under controlled temperature conditions (Tc). The part is also designed to dissipate up to 550W, indicating its capacity to handle substantial power loads. Encased in a TO-3P through-hole package, this MOSFET is equipped with a gate-to-source voltage rating of ±20V and a gate charge of 200 nC at 10 V, making it suitable for high-performance switching tasks.