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IXTQ240N055TN-Channel 55 V 240A (Tc) 480W (Tc) Through Hole TO-3P

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ABRmicro #.ABR2045-IXTQ24-1033304
ManufacturerIXYS
MPN #.IXTQ240N055T
Estimated Lead Time-
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTQ240
Continuous Drain Current (ID) @ 25°C240A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7600 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation480W (Tc)
RDS(on) Drain-to-Source On Resistance3.6mOhm @ 25A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Design/Specification
Multiple Devices Material 23/Jun/2020
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTQ240N055T, manufactured by IXYS, is an N-Channel MOSFET designed for through-hole mounting in a TO-3P package. It is capable of handling a continuous current of 240A when the case temperature is maintained and can dissipate up to 480W. The device can withstand a maximum drain-source voltage of 55V and has a gate charge of 170 nC at 10V. It also features a gate-source voltage rating of ±20V, making it suitable for robust operation in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.