IXTP75N10PN-Channel 100 V 75A (Tc) 360W (Tc) Through Hole TO-220-3
1:$4.0860
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ABRmicro #.ABR2045-IXTP75-1039106
ManufacturerIXYS
MPN #.IXTP75N10P
Estimated Lead Time44 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 4.0860
Ext. Price$ 4.0860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.0860$4.0860
50$3.2400$161.9780
100$2.7770$277.7380
500$2.4680$1234.0940
1000$2.1130$2113.3130
2000$1.9890$3978.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPolar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTP75
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)74 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2250 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation360W (Tc)
RDS(on) Drain-to-Source On Resistance25mOhm @ 500mA, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-220-3
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP75N10P is an N-Channel MOSFET manufactured by IXYS, designed for handling significant power with its capability to manage up to 75A and 100V. It features a low on-resistance of 25 milliohms at 500mA and 10V, making it efficient for conducting current with minimal power loss. The device can dissipate up to 360 watts, emphasizing its suitability for high-power applications. Packaged in a TO-220-3 through-hole configuration, it offers straightforward integration into circuit designs. Additionally, the MOSFET requires a gate threshold voltage of 5.5V at 250µA, indicating its sensitivity and control characteristics in switching applications.
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