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IXTP70N085TN-Channel 85 V 70A (Tc) 176W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-IXTP70-925567
ManufacturerIXYS
MPN #.IXTP70N085T
Estimated Lead Time-
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In Stock: 19
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Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesTrenchMV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTP70
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)85 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)59 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2570 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation176W (Tc)
RDS(on) Drain-to-Source On Resistance13.5mOhm @ 25A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 50µA
Package / CaseTO-220-3
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PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP70N085T is an N-Channel MOSFET manufactured by IXYS, designed for high-performance power switching applications. It can handle a drain-source voltage of up to 85 volts and a continuous current of 70 amps when mounted on a case (Tc). The device offers low on-resistance, measured at 13.5 milliohms with a gate voltage of 10 volts and a drain current of 25 amps. Additionally, it features a total gate charge of 59 nanocoulombs at 10 volts. It has an input capacitance of 2570 picofarads at 25 volts. The MOSFET is housed in a TO-220-3 package, supporting a maximum power dissipation of 176 watts at the case.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.