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IXTP6N50PN-Channel 500 V 6A (Tc) 100W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-IXTP6N-994875
ManufacturerIXYS
MPN #.IXTP6N50P
Estimated Lead Time-
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Technical Specifications
SeriesPolarHV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTP6
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)740 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation100W (Tc)
RDS(on) Drain-to-Source On Resistance1.1Ohm @ 3A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 50µA
Package / CaseTO-220-3
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PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXYS IXTP6N50P is an N-Channel MOSFET designed for efficient control of electrical power. It operates at a maximum voltage of 500 V and can handle currents up to 6 A when properly mounted, with a power dissipation capacity of 100 W in suitable thermal conditions. The component is encapsulated in a TO-220-3 through-hole package, which facilitates easy mounting and heat dissipation. Its input capacitance measures 740 pF at 25 V, and it requires a gate-source voltage of 10 V for full operation. This MOSFET is suitable for various electronic applications requiring controlled switching and efficient power handling.
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