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IXTP50N085TN-Channel 85 V 50A (Tc) 130W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-IXTP50-992776
ManufacturerIXYS
MPN #.IXTP50N085T
Estimated Lead Time-
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Technical Specifications
SeriesTrenchMV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTP50
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)85 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1460 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation130W (Tc)
RDS(on) Drain-to-Source On Resistance23mOhm @ 25A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 25µA
Package / CaseTO-220-3
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PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP50N085T is a robust N-Channel MOSFET manufactured by IXYS, designed for power handling and switching applications. It operates with a maximum voltage of 85 V and a continuous drain current of 50A at the case temperature. The component can dissipate up to 130 W, making it suitable for high power scenarios. It features a gate charge of 34 nC at 10 V and a threshold voltage of 4V at 25µA. The MOSFET is housed in a standard TO-220-3 through-hole package and can withstand gate-source voltages up to ±20V, ensuring reliable performance under various electrical conditions.
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