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IXTP32N65XMN-Channel 650 V 14A (Tc) 78W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-IXTP32-934617
ManufacturerIXYS
MPN #.IXTP32N65XM
Estimated Lead Time-
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DatasheetDatasheetIXTP32N65XM(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesUltra X
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTP32
Continuous Drain Current (ID) @ 25°C14A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2206 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation78W (Tc)
RDS(on) Drain-to-Source On Resistance135mOhm @ 16A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXTP32N65XM
Environmental Information
Ixys IC REACH
PCN Design/Specification
Multiple Devices Molding Compound 07/Sep/2020
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP32N65XM is an N-channel MOSFET manufactured by IXYS, designed for efficient power management and switching applications. It features a maximum drain-source voltage of 650 V and can handle a continuous current of 14A at a case temperature (Tc). The device dissipates up to 78W of power under the same conditions. Encased in a TO-220-3 package, this MOSFET offers a compact and reliable solution for through-hole mounting. It has an input capacitance of 2206 pF at 25 V and a gate threshold voltage of 10V, reflecting its capability for high-voltage operations and fast-switching performance in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.