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IXTP240N055TN-Channel 55 V 240A (Tc) 480W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-IXTP24-981811
ManufacturerIXYS
MPN #.IXTP240N055T
Estimated Lead Time-
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchT2™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTP240
Continuous Drain Current (ID) @ 25°C240A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7600 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation480W (Tc)
RDS(on) Drain-to-Source On Resistance3.6mOhm @ 25A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP240N055T is a high-performance N-Channel MOSFET designed by IXYS. It features a drain-source voltage rating of 55V and supports a continuous drain current of up to 240A under optimal conditions with a total power dissipation of 480W. Housed in a TO-220-3 package, this component is well-suited for through-hole mounting. It exhibits a low on-state resistance of 3.6mOhm at a gate-source voltage of 10V and a drain current of 25A, allowing for efficient conductivity. The device can tolerate gate-source voltages of up to ±20V, enhancing its ruggedness in various electrical conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.