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IXTP220N075TN-Channel 75 V 220A (Tc) 480W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-IXTP22-999033
ManufacturerIXYS
MPN #.IXTP220N075T
Estimated Lead Time-
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In Stock: 3
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTP220
Continuous Drain Current (ID) @ 25°C220A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)165 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7700 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation480W (Tc)
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 25A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP220N075T is a semiconductor device produced by IXYS, characterized as an N-channel MOSFET. It is designed for high-power applications, capable of handling up to 220A of continuous current at 75V with a maximum power dissipation of 480W when properly mounted. The device features a low on-state resistance of 4.5 milliohms at a test condition of 25A and 10V, which helps to reduce power loss and improve efficiency. The gate-to-source voltage rating is ±20V, and it has an input capacitance of 7700 pF at 25 V. The MOSFET is housed in a standard TO-220-3 through-hole package, making it suitable for a variety of thermal management solutions.
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