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IXTP1N80N-Channel 800 V 750mA (Tc) 40W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-IXTP1N-1039804
ManufacturerIXYS
MPN #.IXTP1N80
Estimated Lead Time-
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Box
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Box
Lifecycle StatusObsolete
Base Product NumberIXTP1
Continuous Drain Current (ID) @ 25°C750mA (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)220 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance11Ohm @ 500mA, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 25µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTP1N80 from IXYS is a robust N-Channel MOSFET designed for high-voltage applications, featuring a 800 V drain-source voltage and a continuous current capability of 750mA at a case temperature (Tc). It can handle a power dissipation of up to 40W (Tc), making it suitable for demanding environments. This MOSFET comes in a standard TO-220-3 through-hole package, which facilitates easy mounting and heat dissipation. Key electrical characteristics include a total gate charge of 8.5 nC at 10 V and a threshold voltage of 4.5V at 25µA. The device also exhibits an input capacitance of 220 pF at 25 V, reflecting its efficiency in handling high-frequency switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.