IXTN62N50LN-Channel 500 V 62A (Tc) 800W (Tc) Chassis Mount SOT-227B
1:$60.5150
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ABRmicro #.ABR2045-IXTN62-971918
ManufacturerIXYS
MPN #.IXTN62N50L
Estimated Lead Time57 Weeks
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Datasheet
IXTN62N50L(PDF)
IXTN62N50L(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 60.5150
Ext. Price$ 60.5150
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$60.5150$60.5150
10$54.8390$548.3880
100$49.1650$4916.5060
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesLinear
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTN62
Continuous Drain Current (ID) @ 25°C62A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)550 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)11500 pF @ 25 V
MfrIXYS
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation800W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 500mA, 20V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseSOT-227-4, miniBLOC
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTN62N50L is an N-Channel power MOSFET manufactured by IXYS, designed for high-performance applications. Encased in a robust SOT-227B chassis mount package, this device is capable of handling a maximum drain-source voltage of 500 volts and a continuous current up to 62 amperes when appropriately cooled to maintain the case temperature (Tc). It offers a significant power handling capacity of 800 watts under Tc-rated conditions. The part exhibits a total gate charge of 550 nanocoulombs at 20 volts which ensures efficient switching performance. Additionally, it requires a threshold gate-source voltage of 5 volts at a minuscule test current of 250 microamperes.
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