Image is for reference only, the actual product serves as the standard.
IXTK128N15N-Channel 150 V 128A (Tc) 540W (Tc) Through Hole TO-264 (IXTK)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTK12-1017188
ManufacturerIXYS
MPN #.IXTK128N15
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
IGBT Module NPT Single 1200 V 100 A 445 W Chassis Mount SOT-227B
IGBT 600 V 75 A 300 W Through Hole TO-247AD
IXGH6N170$9.0360
IGBT NPT 1700 V 12 A 75 W Through Hole TO-247AD
IGBT 600 V 75 A 300 W Through Hole TO-264 (IXGK)
IGBT Module PT Single 600 V 200 A 595 W Chassis Mount SOT-227B
IGBT PT 600 V 62 A 210 W Through Hole ISOPLUS247™
IXYL60N450$105.9140
IGBT 4500 V 90 A 417 W Through Hole ISOPLUSi5-Pak™
Technical Specifications
SeriesMegaMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTK128
Continuous Drain Current (ID) @ 25°C128A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)240 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6000 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation540W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 500mA, 10V
Package Type (Mfr.)TO-264 (IXTK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTK128N15 is a high-power N-channel MOSFET manufactured by IXYS, designed for robust performance in demanding applications. It operates at a maximum voltage of 150V and can handle a current of 128A, according to its case temperature (Tc) ratings. The package is a TO-264 through-hole type, facilitating easy mounting and efficient heat dissipation. This MOSFET is capable of dissipating up to 540 watts of power under specified conditions. The device features a gate threshold voltage of ±20V and a gate charge capacitance of 6000 pF at 25V, with a gate drive voltage of 10V, making it suitable for various high-power switching requirements.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.