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IXTH6N90N-Channel 900 V 6A (Tc) 180W (Tc) Through Hole TO-247 (IXTH)

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ABRmicro #.ABR2045-IXTH6N-1039030
ManufacturerIXYS
MPN #.IXTH6N90
Estimated Lead Time-
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTH6
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2600 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance1.8Ohm @ 500mA, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH6N90 is a high-performance N-Channel MOSFET manufactured by IXYS, designed to handle high voltage and current with reliability. It is capable of operating at a maximum voltage of 900V and has a continuous current rating of 6A when properly cooled. The device can dissipate up to 180W of power under optimal thermal conditions. Encased in a robust TO-247 package, the IXTH6N90 is suitable for through-hole mounting. Additionally, it features a gate-source voltage rating of ±20V and exhibits a typical gate charge of 130 nC at 10 V, indicating its efficiency in turning on and off. With these specifications, this MOSFET is suited for demanding power applications requiring high efficiency and stability.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.