IXTH40N30N-Channel 300 V 40A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
1:$7.5300
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ABRmicro #.ABR2045-IXTH40-920634
ManufacturerIXYS
MPN #.IXTH40N30
Estimated Lead Time-
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Datasheet
IXTH(35,40)N30, IXTM40N30(PDF)
IXTH(35,40)N30, IXTM40N30(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 7.5300
Ext. Price$ 7.5300
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$7.5300$225.8980
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesMegaMOS™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIXTH40
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)220 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4600 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance85mOhm @ 500mA, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH40N30 is an N-channel MOSFET manufactured by IXYS, designed for high power applications with a voltage rating of 300 V and a continuous current rating of 40 A when measured at case temperature (Tc). It can handle power dissipation up to 300 W (Tc), making it suitable for systems requiring efficient power management. The device features a gate-source voltage of 10 V, with a maximum gate threshold of ±20 V. It is encased in a robust TO-247 package, suitable for through-hole mounting, which provides excellent heat dissipation and reliable mechanical stability for demanding environments.
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