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IXTH30N50N-Channel 500 V 30A (Tc) 360W (Tc) Through Hole TO-247 (IXTH)

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ABRmicro #.ABR2045-IXTH30-944948
ManufacturerIXYS
MPN #.IXTH30N50
Estimated Lead Time-
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In Stock: 16
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMegaMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTH30
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)227 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5680 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation360W (Tc)
RDS(on) Drain-to-Source On Resistance170mOhm @ 500mA, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH30N50 is an N-Channel MOSFET manufactured by IXYS, designed for high-power applications. It operates at a maximum voltage of 500V and can handle a current of 30A, with a power dissipation capacity of 360W when mounted on a suitable heatsink (typically represented by the case temperature, Tc). Encased in a TO-247 package, this through-hole component offers a total gate charge of 5680 pF at 25V, with an Rds(on) of 170mOhm at 500mA and 10V, signifying its efficiency in switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.