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IXTH16P20P-Channel 200 V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
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ABRmicro #.ABR2045-IXTH16-972860
ManufacturerIXYS
MPN #.IXTH16P20
Estimated Lead Time-
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DatasheetIXTH16P20(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTH16
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2800 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 500mA, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH16P20 is a P-Channel power MOSFET manufactured by IXYS, featuring a voltage rating of 200V and a maximum continuous current capability of 16A under specific conditions (Tc). It offers a significant power dissipation capability of up to 300W when mounted on a proper heatsink (Tc), housed in a robust TO-247 package suitable for through-hole mounting. The device exhibits an input capacitance of 2800 pF at 25V and has gate charge specifications of 95 nC at 10V, making it suitable for applications requiring efficient switching performance. Its gate threshold voltage tolerance is specified at ±20V.
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