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IXTH13N80N-Channel 800 V 13A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

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ABRmicro #.ABR2045-IXTH13-983253
ManufacturerIXYS
MPN #.IXTH13N80
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIXT(H,M)(11,13)N80(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMegaMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTH13
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4500 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance800mOhm @ 500mA, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXT(H,M)(11,13)N80
Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTH13N80 is a high-voltage, N-channel MOSFET manufactured by IXYS. It is designed for efficient power management, offering an 800 V drain-source breakdown voltage and a current rating of 13A when properly mounted on a thermally conducive surface. This component delivers a power dissipation capacity of 300W at the case temperature, housed in a TO-247 package enabling through-hole mounting. The MOSFET features a gate-source voltage threshold of 4.5V at a test current of 250µA and exhibits a total gate charge of 170 nC at 10V. These characteristics make it effective for high-power applications where space and thermal considerations are managed.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.