IXTF6N200P3N-Channel 2000 V 4A (Tc) 215W (Tc) Through Hole ISOPLUS i4-PAC™
1:$22.8570
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTF6N-1030647
ManufacturerIXYS
MPN #.IXTF6N200P3
Estimated Lead Time43 Weeks
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Datasheet
IXTF6N200P3(PDF)
IXTF6N200P3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 22.8570
Ext. Price$ 22.8570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
300$22.8570$6856.9500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesPolar P3™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTF6
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)2000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)143 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3700 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation215W (Tc)
RDS(on) Drain-to-Source On Resistance4.2Ohm @ 3A, 10V
Package Type (Mfr.)ISOPLUS i4-PAC™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseISOPLUSi5-PAK™
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTF6N200P3 is a semiconductor device manufactured by IXYS, designed as an N-channel MOSFET. It can handle a maximum voltage of 2000 volts and a continuous current of 4 amperes when properly mounted, offering a power dissipation of 215 watts under similar conditions. The component is housed in an ISOPLUS i4-PAC™ package, suitable for through-hole mounting. Key electrical characteristics include a gate-source threshold voltage of 10 volts, a capacitance of 3700 pF at 25 volts, and a total gate charge of 143 nC at 10 volts. This part is engineered to provide efficient performance in high-voltage applications.
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