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IXTF1R4N450N-Channel 4500 V 1.4A (Tc) 190W (Tc) Through Hole ISOPLUS i4-PAC™

1:$69.9350

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXTF1R-928795
ManufacturerIXYS
MPN #.IXTF1R4N450
Estimated Lead Time44 Weeks
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In Stock: 31
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 69.9350
Ext. Price$ 69.9350
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$69.9350$69.9350
10$63.8470$638.4670
100$57.7550$5775.5380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTF1
Continuous Drain Current (ID) @ 25°C1.4A (Tc)
Drain-to-Source Voltage (VDS)4500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)88 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3300 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance40Ohm @ 50mA, 10V
Package Type (Mfr.)ISOPLUS i4-PAC™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6V @ 250µA
Package / Casei4-Pac™-5 (3 Leads)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTF1R4N450 by IXYS is a high-voltage, N-channel MOSFET designed for robust power applications. It boasts a drain-source voltage rating of 4500 V, coupled with a continuous drain current of 1.4A when mounted on a suitable heat sink (Tc). The device achieves efficient thermal management with a power dissipation capacity of 190W (Tc) and features the distinctive ISOPLUS i4-PAC™ package, facilitating through-hole mounting. It has a gate-source voltage threshold of 10V and a gate charge capacitance of 3300 pF at 25 V, while tolerating gate-source voltages up to ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.