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IXTC220N055TN-Channel 55 V 130A (Tc) 150W (Tc) Through Hole ISOPLUS220™

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ABRmicro #.ABR2045-IXTC22-1023303
ManufacturerIXYS
MPN #.IXTC220N055T
Estimated Lead Time-
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTC220
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)158 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7200 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance4.4mOhm @ 25A, 10V
Package Type (Mfr.)ISOPLUS220™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseISOPLUS220™
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTC220N055T, manufactured by IXYS, is an N-Channel power MOSFET that can handle up to 55 volts and 130 amps of current under certain conditions (Tc), with a power dissipation of 150 watts. It is designed in a through-hole ISOPLUS220™ package, which provides ease of mounting and suitable heat dissipation. The part features a gate-source voltage of ±20V and a typical input capacitance of 7200 pF at 25 V. It operates effectively with a gate threshold voltage of 10V, making it suitable for various demanding electronic applications requiring robust switching performance.
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