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IXTC220N055TN-Channel 55 V 130A (Tc) 150W (Tc) Through Hole ISOPLUS220™
N/A
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ABRmicro #.ABR2045-IXTC22-1023303
ManufacturerIXYS
MPN #.IXTC220N055T
Estimated Lead Time-
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Technical Specifications
SeriesTrenchMV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTC220
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)158 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7200 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance4.4mOhm @ 25A, 10V
Package Type (Mfr.)ISOPLUS220™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseISOPLUS220™
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Extended Links
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTC220N055T, manufactured by IXYS, is an N-Channel power MOSFET that can handle up to 55 volts and 130 amps of current under certain conditions (Tc), with a power dissipation of 150 watts. It is designed in a through-hole ISOPLUS220™ package, which provides ease of mounting and suitable heat dissipation. The part features a gate-source voltage of ±20V and a typical input capacitance of 7200 pF at 25 V. It operates effectively with a gate threshold voltage of 10V, making it suitable for various demanding electronic applications requiring robust switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.