IXTA270N04T4-7N-Channel 40 V 270A (Tc) 375W (Tc) Surface Mount TO-263-7 (IXTA)
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ABRmicro #.ABR2045-IXTA27-1006296
ManufacturerIXYS
MPN #.IXTA270N04T4-7
Estimated Lead Time-
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrench
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTA270
Continuous Drain Current (ID) @ 25°C270A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)182 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9140 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance2.2mOhm @ 50A, 10V
Package Type (Mfr.)TO-263-7 (IXTA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA270N04T4-7 is a surface-mount N-Channel MOSFET manufactured by IXYS, designed for high power applications. It supports a maximum drain-source voltage of 40V and a continuous drain current of 270A under specific conditions. This MOSFET comes in a TO-263-7 package, which facilitates efficient thermal management and compact design integration. It is characterized by a gate threshold voltage of 4V at a gate current of 250µA and has a total gate charge of 182 nC at 10V. With a power dissipation capacity of 375W, it is suitable for demanding environments where robust performance and reliability are required.
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