IXTA220N055T7N-Channel 55 V 220A (Tc) 430W (Tc) Surface Mount TO-263-7 (IXTA)
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ABRmicro #.ABR2045-IXTA22-1005819
ManufacturerIXYS
MPN #.IXTA220N055T7
Estimated Lead Time-
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMV™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXTA220
Continuous Drain Current (ID) @ 25°C220A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)158 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7200 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation430W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 25A, 10V
Package Type (Mfr.)TO-263-7 (IXTA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTA220N055T7 is a high-performance N-channel power MOSFET manufactured by IXYS, designed for surface mount applications with a TO-263-7 package. It is capable of handling a maximum drain-source voltage of 55V and a continuous current rating of 220A at a case temperature (Tc), allowing for efficient power management. The device can dissipate up to 430W under optimal conditions, making it suitable for high-power applications. It features a total gate charge of 158 nC at 10V, providing fast switching capabilities, and has an input capacitance of 7200 pF at 25V, which influences how quickly the MOSFET can be driven. Additionally, it has a threshold voltage of 4V at a test current of 250µA.
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