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IXFX90N60XN-Channel 600 V 90A (Tc) 1100W (Tc) Through Hole PLUS247™-3

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ABRmicro #.ABR2045-IXFX90-996926
ManufacturerIXYS
MPN #.IXFX90N60X
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIXF(K,X)90N60X(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™, Ultra X
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFX90
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)210 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8500 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1100W (Tc)
RDS(on) Drain-to-Source On Resistance38mOhm @ 45A, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 8mA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXF(K,X)90N60X
Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFX90N60X is a high-performance N-channel MOSFET manufactured by IXYS. It is designed to handle up to 600V and 90A, with a power dissipation capacity of 1100W when mounted in a suitable heat-sink environment. The component is housed in a PLUS247™-3 package, suitable for through-hole mounting. It exhibits a low on-state resistance of 38 milliohms at 45A and 10V, and features a gate charge of 210 nanocoulombs at 10V, making it efficient for switching applications. The device can tolerate gate-source voltages of up to ±30V, providing robustness in various circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.