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IXFX24N100FN-Channel 1000 V 24A (Tc) 560W (Tc) Through Hole PLUS247™-3

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ABRmicro #.ABR2045-IXFX24-951883
ManufacturerIXYS
MPN #.IXFX24N100F
Estimated Lead Time-
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerRF™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFX24
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)195 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6600 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation560W (Tc)
RDS(on) Drain-to-Source On Resistance390mOhm @ 12A, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 8mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Design/Specification
Mult DEV Mult Changes 13/May/2024
PCN Obsolescence/ EOL
Mult Dev EOL 18/Jan/2019
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXYS IXFX24N100F is an N-Channel MOSFET designed for high-voltage applications, offering a maximum voltage rating of 1000V and a continuous current capacity of 24A when properly mounted due to its 560W power dissipation capability. Packaged in a PLUS247™-3 through-hole format, this transistor is suited for efficient power handling and heat dissipation. It features a 10V threshold voltage and a total gate charge of 195 nC at 10V, indicating its efficient switching characteristics and suitability for various high-power circuitry needs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.