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IXFX15N100N-Channel 1000 V 15A (Tc) 360W (Tc) Through Hole PLUS247™-3

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ABRmicro #.ABR2045-IXFX15-1024162
ManufacturerIXYS
MPN #.IXFX15N100
Estimated Lead Time-
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFX15
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)220 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4500 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation360W (Tc)
RDS(on) Drain-to-Source On Resistance700mOhm @ 7.5A, 10V
Package Type (Mfr.)PLUS247™-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 4mA
Package / CaseTO-247-3 Variant
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
MSL LevelNot Required
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXYS IXFX15N100 is a high-voltage N-Channel MOSFET designed for through-hole mounting, featuring a PLUS247™-3 package. It is capable of handling up to 1000 volts and a continuous current of 15A at a case temperature, with a power dissipation of 360W under similar thermal conditions. The device exhibits a drain-source on-state resistance (RDS(on)) of 700 milliohms at a drain current of 7.5A and a gate voltage of 10V, and it supports a gate-to-source voltage range of ±20V. This MOSFET is suitable for high-power applications requiring efficiency and reliability.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.